The RN1601‑RN1606 series are silicon N‑type epitaxial NPN transistors offered by Toshiba for switching and inverter circuit applications. The document provides typical electrical parameters, maximum ratings and the device marking codes.
Key specifications include a collector‑base voltage of 50 V, collector‑emitter voltage of 50 V, collector current up to 100 mA, power dissipation of 300 mW, junction temperature rating of 150 °C and storage temperature range of –55 °C to 150 °C. Transition frequency reaches about 250 MHz and capacitance values are in the low‑pico‑farad range.
| Collector‑Emitter Voltage (VCE) | 50 V |
|---|---|
| Collector Current (IC) | 100 mA |
| Collector Power Dissipation (Pc) | 300 mW |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature Range | -55 °C to 150 °C |
The maximum collector current is 100 mA.
They are rated for a collector‑emitter voltage of 50 V.
They can be stored from –55 °C up to 150 °C.