Key facts
- Brand
- STMicroelectronics
- Model
- STP11NM80
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-08-07
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STMicroelectronics STP11NM80-STF11NM80-STB11NM80-STW11NM80 Datasheet
This document describes the STP11NM80, STF11NM80, STB11NM80, and STW11NM80 N-channel 800V MDmesh Power MOSFETs. These devices utilize a revolutionary technology combining Multiple Drain process with PowerMESH horizontal layout to achieve outstanding low on-resistance, high dv/dt, and excellent avalanche characteristics.
Read onlineAll STMicroelectronics STP11NM80 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What are the available packages for this MOSFET family?
The devices are available in TO-220, TO-220FP, D2PAK (TO-263), and TO-247 packages.
From: STMicroelectronics STP11NM80-STF11NM80-STB11NM80-STW11NM80 Datasheet
What is the maximum drain‑source voltage for these MOSFETs?
The devices are rated for a maximum drain‑source voltage of 800 V.
From: STMicroelectronics STP11NM80 / STF11NM80 / STB11NM80 / STW11NM80 MOSFET Datasheet
What package types are available for the STP11NM80 family?
The family is offered in TO‑220, TO‑220FP, DPAK, and TO‑247 packages.
From: STMicroelectronics STP11NM80 / STF11NM80 / STB11NM80 / STW11NM80 MOSFET Datasheet