This document describes the features and characteristics of products such as STP11NM80, STF11NM80, STB11NM80, and STW11NM80, including low on-resistance, low input capacitance and gate charge, and suitability for single switch applications.
The STMicroelectronics MDmesh™ 800 V N‑channel MOSFET family (STP11NM80, STF11NM80, STB11NM80, STW11NM80) is designed for high‑voltage single‑switch applications such as flyback and forward converters and ignition circuits for lighting. The devices feature low on‑resistance, low gate charge, and a proprietary horizontal layout that improves dynamic performance.
The datasheet provides absolute maximum ratings, thermal data, avalanche characteristics, and detailed electrical parameters. It also lists the mechanical dimensions for TO‑220, TO‑220FP, DPAK, and TO‑247 packages, along with order codes and packaging options.
| Drain‑source voltage (VDS) | 800 V |
|---|---|
| Thermal resistance junction‑ambient (RθJA) | 62.5 °C/W |
The devices are rated for a maximum drain‑source voltage of 800 V.
The family is offered in TO‑220, TO‑220FP, DPAK, and TO‑247 packages.