STB20NM50-1 is a N-channel MOSFET device produced by ST company. It has a maximum voltage of 550V@Tjmax, a conduction resistance of 0.20Ω, a current of 20A and a TO220/FP-D²PAK-I²PAK package.
This document is a technical datasheet for the STMicroelectronics MDmesh™ N-channel MOSFET family. The series includes models STB20NM50, STB20NM50-1, STP20NM50, and STP20NM50FP, featuring 550V breakdown voltage and a maximum continuous drain current of 20A.
| Total Gate Charge (Qg) | Max. 56 nC |
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This family is suitable for increasing power density of high voltage converters to allow system miniaturization and higher efficiencies.
The maximum total power dissipation is 45 W for the TO-220FP package at 25°C.
The maximum gate-source voltage rating is +30 V.