This document describes the STP20NM50FD and STB20NM50FD-1 N-channel power MOSFETs, which have low on-resistance, high dv/dt and avalanche capabilities, low input capacitance and gate charge, tight process control, and high manufacturing yields. It is recommended for use in bridge topologies, particularly ZVS phase-shift converters.
This document is a technical datasheet for the STP20NM50FD and STB20NM50FD-1 N-channel power MOSFETs. These devices feature an intrinsic fast-recovery body diode (FDmesh™ technology) designed to reduce on-resistance and improve switching speeds, making them suitable for bridge topologies like ZVS phase-shift converters in SMPS and welding equipment.
The datasheet provides comprehensive electrical characteristics, including absolute maximum ratings, thermal data, avalanche capabilities, and dynamic parameters such as gate charge and capacitance. It also includes detailed mechanical dimensions for both the TO-220 and PAK (TO-262) packages.
They are recommended for bridge topologies, in particular ZVS phase-shift converters for SMPS and welding equipment.
The maximum operating junction temperature is 150 °C.