Key facts
- Brand
- Samsung
- Model
- K9F1216U0A
- Documents
- 4
- Languages
- EN
- Last added
- 2012-04-01
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Samsung K9F1208D0A / K9F1208U0A / K9F1216D0A / K9F1216U0A NAND Flash Memory Datasheet
The document describes the 64M × 8 bit and 32M × 16 bit NAND flash memory devices, including voltage supply ranges, memory organization, and package types such as 48‑pin TSOP1 and WSOP1. It lists part numbers, Vcc ranges (2.65 V and 3.8 V devices), and features like automatic program/erase, hardware data protection, and endurance.
Detailed pin configurations for both TSOP1 and WSOP1 packages are provided, along with functional block diagrams, array organization, timing parameters, and power‑up and data‑protection sequences. Electrical specifications such as program time, block erase time, and recommended pull‑up resistor values are also included.
Samsung K9F1216U0A specifications
| Vcc Range (2.65 V device) | 2.4 ~ 2.9 V |
|---|---|
| Vcc Range (3.8 V device) | 2.7 ~ 3.6 V |
| Endurance | 100 K program/erase cycles |
| Data Retention | 10 years |
| Program Time (typ.) | 200 µs |
| Block Erase Time (typ.) | 2 ms |
| Page Size (X8 device) | 528 Byte |
| Block Size (X8 device) | 16 K + 512 Byte |
| Package Type | 48‑pin TSOP1, 12 × 20 mm, 0.5 mm pitch |
Source: Samsung K9F1208D0A / K9F1208U0A / K9F1216D0A / K9F1216U0A NAND Flash Memory Datasheet
All Samsung K9F1216U0A documents by type
Ratings, dimensions and ordering codes, for selection and design work.
- Samsung K9F1208D0A / K9F1208U0A / K9F1216D0A / K9F1216U0A NAND Flash Memory Datasheet 46 p
- Samsung K9F1208D0A/K9F1208U0A/K9F1216D0A/K9F1216U0A NAND Flash Memory Datasheet 46 p
- Samsung K9F1216U0A / K9F1208U0A Flash Memory Datasheet 45 p
- Samsung K9F1208D0A / K9F1208U0A / K9F1216D0A / K9F1216U0A NAND Flash Memory Datasheet 46 p
Questions answered in these manuals
What is the recommended Vcc range for the 2.65 V NAND flash device?
The 2.65 V device operates with a Vcc range of 2.4 V to 2.9 V.
From: Samsung K9F1208D0A / K9F1208U0A / K9F1216D0A / K9F1216U0A NAND Flash Memory Datasheet
How long does a typical program operation take for the X8 device?
A typical program operation takes about 200 µs.
From: Samsung K9F1208D0A / K9F1208U0A / K9F1216D0A / K9F1216U0A NAND Flash Memory Datasheet
What is the Vcc range for the K9F1208D0A device?
The K9F1208D0A operates from 24 V to 29 V.
From: Samsung K9F1208D0A/K9F1208U0A/K9F1216D0A/K9F1216U0A NAND Flash Memory Datasheet
What is the typical program time per page?
A page program takes about 200 µs (typical).
From: Samsung K9F1208D0A/K9F1208U0A/K9F1216D0A/K9F1216U0A NAND Flash Memory Datasheet
How many program/erase cycles can the flash memory endure?
The flash memory is rated for 100 000 program/erase cycles.
From: Samsung K9F1216U0A / K9F1208U0A Flash Memory Datasheet
What is the data retention time guaranteed by the device?
Data is retained for up to 10 years.
From: Samsung K9F1216U0A / K9F1208U0A Flash Memory Datasheet