K9F1208U0A and K9F1216U0A are 64M x 8 bit and 32M x 16 bit NAND flash memory chips produced by Samsung Electronics, supporting 1.8V and 3.3V power supply.
The Samsung K9F1216U0A and K9F1208U0A are 64M‑bit x 8‑bit and 32M‑bit x 16‑bit NAND flash memory devices offered in 3.3 V operation. The document provides detailed specifications, pin configurations, functional block diagrams, and electrical characteristics for both X8 and X16 organizations.
Key features include automatic program/erase, hardware data protection, high endurance (100 K program/erase cycles), and a 10‑year data retention. The datasheet also describes power‑up sequencing, ready/busy signaling, and package options such as TSOP1 and WSOP1.
| Endurance | 100 K Program/Erase Cycles |
|---|---|
| Data Retention | 10 Years |
| Page Size (X8) | 528 Byte |
| Page Size (X16) | 264 Word |
| Block Erase Time (Typ.) | 2 ms |
| Program Time (Typ.) | 200 µs |
| Serial Page Access Time | 50 ns (Min.) |
The flash memory is rated for 100 000 program/erase cycles.
Data is retained for up to 10 years.
The WP pin provides hardware write/erase protection during power transitions and should be kept low during power‑up and power‑down.