Key facts
- Brand
- Samsung
- Model
- K9F1608W0A-TIB0
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-01
Start here
samsung K9F1608W0A-TCB0 K9F1608W0A-TIB0 FLASH MEMORY handbook(1)
The Samsung K9F1608WO0A is a 2‑Mbit (2,097,152 × 8‑bit) NAND flash memory chip designed for solid‑state mass‑storage applications such as digital voice recorders, cameras and other portable devices.
It features a 2.7 V‑5.5 V supply range, automatic program/erase, 250 µs typical page program time, 2 ms block erase, 1 M program/erase cycles endurance and 10‑year data retention, packaged in a 44‑lead TSOP Type II.
Samsung K9F1608W0A-TIB0 specifications
| Supply Voltage | 2.7 V ~ 5.5 V |
|---|---|
| Memory Organization | 2M × 8 bit NAND Flash |
| Page Program Time (typ.) | 250 µs |
| Block Erase Time (typ.) | 2 ms |
| Endurance | 1 M program/erase cycles |
| Data Retention | 10 years |
| Package Type | 44‑lead TSOP Type II (400 mil / 0.8 mm pitch) |
| Valid Block Number | 502 ~ 512 blocks |
Source: samsung K9F1608W0A-TCB0 K9F1608W0A-TIB0 FLASH MEMORY handbook(1)
All Samsung K9F1608W0A-TIB0 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the supply voltage range for the K9F1608WO0A?
The device operates from 2.7 V to 5.5 V.
From: samsung K9F1608W0A-TCB0 K9F1608W0A-TIB0 FLASH MEMORY handbook(1)
How many program/erase cycles can the chip endure?
It is rated for 1 million program/erase cycles.
From: samsung K9F1608W0A-TCB0 K9F1608W0A-TIB0 FLASH MEMORY handbook(1)
What is the operating voltage range for the K9F1608WO0A flash memory?
The device operates from 2.7 V to 5.5 V.
From: samsung K9F1608W0A-TCB0 K9F1608W0A-TIB0 FLASH MEMORY handbook(1)(1)
How many program/erase cycles can the K9F1608WO0A endure?
It is rated for 1 million program/erase cycles.
From: samsung K9F1608W0A-TCB0 K9F1608W0A-TIB0 FLASH MEMORY handbook(1)(1)