Key facts
- Brand
- Samsung
- Model
- K9F1G08R0A
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-01
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Samsung K9F1G08R0A Data Sheet
Datasheet 37 pages · 903 KB · EN
The K9F1G08ROA is a 128M‑x‑8‑Bit NAND flash memory device offered by Samsung, organized as 1 Gbit with an additional 32 Mbit spare capacity. It features fast program cycles, low‑power operation, and high endurance suitable for solid‑state storage applications.
The datasheet provides full electrical characteristics, pin configurations for TSOP1, WSOP1 and ULGA packages, command sets, and timing diagrams, along with protection features for power‑up and power‑down sequences.
Samsung K9F1G08R0A specifications
| Voltage Supply (1.8V device) | 1.65 V ~ 1.95 V |
|---|---|
| Voltage Supply (3.3V device) | 2.7 V ~ 3.6 V |
| Typical Program Time | 200 µs |
| Typical Block Erase Time | 2 ms |
| Page Size | 2 KB |
| Page Program Size | (2K + 64) Bytes |
| Block Erase Size | (128K + 4K) Bytes |
| Endurance | 100 K program/erase cycles |
| Data Retention | 10 Years |
| Random Read Access Time | 25 ns (Max.) |
| Serial Access Time | 30 ns (Min.) |
| Package Type (TSOP1) | 48‑Pin TSOP, 12 × 20 mm, 0.5 mm pitch |
| Package Type (WSOP1) | 48‑Pin WSOP, 12 × 17 mm, 0.7 mm height |
| Package Type (ULGA) | 52‑Pin ULGA, 12 × 17 mm, 0.65 mm height |
Source: Samsung K9F1G08R0A Data Sheet
All Samsung K9F1G08R0A documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the voltage range for the 1.8 V K9F1G08ROA device?
The device operates from 1.65 V to 1.95 V.
What is the typical program time for the K9F1G08 series?
Typical program time is 200 µs per page.
What is the typical program time for the 1.8 V device?
The typical program time is 200 ns.
What is the block erase time for the 3.3 V device?
The typical block erase time is 2 ms.