This document describes the features and characteristics of ROHM's 1.5V Drive Nch+Pch MOSFET, including low on-resistance, low voltage drive, and built-in G-S protection diode. It is suitable for applications such as internal circuit switching.
The US6M11 is a dual MOSFET that combines an N‑channel and a P‑channel device in a single TUMT6 package. It is designed for low‑voltage (1.5 V) drive applications and includes a built‑in G‑S protection diode.
Key features include low on‑resistance, high current capability, and detailed electrical characteristics such as drain‑source voltage ratings, gate‑source limits, and thermal parameters. The datasheet also provides typical output curves, switching time measurements, and recommended application circuits.
| Drain‑source voltage (VDS) | 20 V (N‑channel), 12 V (P‑channel) |
|---|---|
| Gate‑source voltage (VGS) | ±10 V |
| Power dissipation (PD) | 10 W total |
| Thermal resistance (RθJA) | 125 °C/W total |
The N‑channel MOSFET is rated for 20 V and the P‑channel MOSFET for 12 V drain‑source voltage.
It is a 1.5 V drive MOSFET, meaning it can be fully turned on with a gate voltage of about 1.5 V.
The device is supplied in a TUMT6 package, type code TR.