US6M1 Transistors Rev.B is a silicon N-channel / P-channel MOSFET with low on-resistance, built-in G-S protection diode, and small surface mount package (TUMT6). It is suitable for power switching and DC/DC converter applications.
The US6M1 is a dual N‑channel/P‑channel MOSFET offered by ROHM in a compact TUMT6 surface‑mount package. It features low on‑resistance and a built‑in gate‑source protection diode, making it suitable for power‑switching and DC‑DC converter applications.
The document lists absolute maximum ratings, thermal resistance, and detailed electrical characteristics for both N‑channel and P‑channel versions, including drain‑source voltage, gate‑source voltage, drain current, and capacitances. It also provides characteristic curves, measurement circuit diagrams, and an appendix with usage notes and export‑control information.
| Maximum gate‑source voltage | 20 V |
|---|---|
| Maximum drain‑source voltage | 30 V |
| Thermal resistance (junction‑to‑ambient) | 125 °C/W |
The device is rated for a maximum gate‑source voltage of 20 V.
The junction‑to‑ambient thermal resistance is 125 °C/W.