US5U3 is a high-voltage, low-voltage drive, low-voltage drop, high-switching frequency Nch+SBD MOSFET device. The device is packaged in TUMT5 and has a built-in low VF Schottky diode. It can be widely used in switch power supplies, DC/DC converters, LED drivers, motor drivers and other fields.
The US5U3 is an N‑channel MOSFET combined with a Schottky barrier diode in a TUMTS5 package, offering high‑speed switching, low on‑resistance, and low‑voltage drive capability. It is intended for switching applications where a built‑in diode is advantageous.
Key specifications include a 30 V drain‑source rating, 5 A continuous drain current, low gate threshold (0.5‑1.5 V), and typical on‑resistance around 180 mΩ. The device is supplied on a ceramic board and includes detailed electrical characteristics and characteristic curves for design reference.
| Drain‑source voltage (VDS) | 30 V |
|---|---|
| Gate‑source voltage (VGS) | 12 V |
| Continuous drain current (ID) | 5 A |
| Power dissipation per element | 0.207 W |
| Gate threshold voltage (VGS(th)) | 0.5 – 1.5 V |
The US5U3 can tolerate up to 30 V between drain and source.
It is rated for a continuous drain current of 5 A.
The gate threshold voltage ranges from 0.5 V to 1.5 V.
The device is packaged in a TUMTS5 (MOSFET‑plus‑Schottky) package.