US5U38 Transistor is a product that combines a silicon P-channel MOSFET with a Schottky barrier diode. It features low on-resistance, fast switching, and low voltage drive (2.5V). It is suitable for switching applications.
The US5U38 is a P‑channel MOSFET combined with a Schottky barrier diode in a TUMTS5 package. It offers low on‑resistance, fast switching, and a low‑voltage drive of 2.5 V.
The document lists absolute maximum ratings, detailed electrical parameters, characteristic curves, and measurement circuit examples. It also includes usage notices, storage temperature limits, and legal information from ROHM.
| Drain‑source voltage (Vds) | -20 V |
|---|---|
| Gate‑source voltage (Vgs) | +12 V |
| Continuous drain current (Id) | 1.0 A |
| Power dissipation (per element) | 0.7 W |
| Reverse voltage (VR) | 20 V |
| Forward voltage (VF) of Schottky diode | 0.49 V |
| Storage temperature range | -55 °C to +150 °C |
| Drive voltage | 2.5 V |
The maximum drain‑source voltage is –20 V.
The Schottky diode’s typical forward voltage is 0.49 V.
A low drive voltage of 2.5 V is sufficient.