This document describes the features and characteristics of the FQPF30N06 60V N-Channel MOSFET product produced by Fairchild Semiconductor Corporation. This product utilizes Fairchild's proprietary planar stripe DMOS technology, which minimizes on-state resistance, provides superior switching performance, and withstands high energy pulse in avalanche and commutation modes. It is suitable for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
The FQPF30N06 is a 60 V N‑Channel enhancement mode power MOSFET built with Fairchild's planar stripe DMOS technology. It offers low on‑state resistance, fast switching, and high avalanche capability, making it suitable for low‑voltage automotive, DC‑DC converters and portable power‑management applications.
The document provides absolute maximum ratings, electrical characteristics, typical performance curves, thermal data, and package dimensions for the TO‑220F package, along with trademark and product status information.
| Drain‑Source Voltage (VDS) | 60 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 21 A |
| Continuous Drain Current (ID) at 100 °C | 149 A |
| Pulsed Drain Current (ID) (Note 1) | 84 A |
| Gate‑Source Voltage (VGS) | +25 V |
| Power Dissipation (PD) at 25 °C | 39 W |
| Maximum Junction Temperature (TJ) | 175 °C |
| Thermal Resistance, Junction‑to‑Case (RJC) | 3.85 °C/W |
| Thermal Resistance, Junction‑to‑Ambient (RJA) | 62.5 °C/W |
The device is rated for a maximum drain‑source voltage of 60 V.
Continuous drain current is 21 A at 25 °C (149 A at 100 °C) and pulsed drain current is 84 A.
Typical total gate charge is 19 nC.
It is supplied in a TO‑220F package.