This document describes the features and characteristics of the FQPF30N06 60V N-Channel MOSFET product. It is produced using Fairchild's proprietary DMOS technology, which provides low on-state resistance, superior switching performance, and high energy pulse withstand capability. It is suitable for low voltage applications.
The FQPF30N06 is a 60 V N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for low‑voltage applications such as automotive, DC‑DC converters, and high‑efficiency power management in portable and battery‑operated products.
Key features include a typical on‑resistance of 0.042 Ω at VGS = 10 V, low gate charge (≈19 nC), fast switching, 100 % avalanche tested capability, and a maximum junction temperature of 175 °C. The device is supplied in a TO‑220F package and provides robust thermal performance with a junction‑to‑case resistance of 3.85 °C·W.