FQPF1P50 is a 500V P-channel MOSFET produced by Fairchild. It features low on-state resistance, fast switching, low gate charge and high surge current.
The FQPF1P50 is a P‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It offers low on‑state resistance, low gate charge, and fast switching, making it suitable for electronic lamp ballasts and other high‑voltage applications.
Key features include a continuous drain current of -1.03 A at 25 °C, a pulsed rating of -4.12 A, a maximum drain‑source voltage of -500 V, and a typical gate charge of 11 nC. The device is supplied in a TO‑220F package and includes detailed thermal and electrical characteristics for design engineers.
| Drain‑Source Voltage (V_DSS) | -500 V |
|---|---|
| Continuous Drain Current (I_D) at 25 °C | -1.03 A |
| Pulsed Drain Current (I_D(pulse)) | -4.12 A |
| Gate‑Source Voltage (V_GS) | +30 V |
| Total Gate Charge (Q_g) | 11 nC (typical) |
| Power Dissipation (P_D) at 25 °C | 28 W |
| Package | TO‑220F |
The device can withstand a drain‑source voltage of -500 V.
Yes, it is 100% avalanche tested.
It is supplied in a TO‑220F package.
The device operates from -55 °C to +150 °C.