This document describes the features and characteristics of Fairchild Semiconductor Corporation's UniFET TM FDA28N50 N-Channel MOSFET product, including a rated voltage of 500V, a rated current of 28A, and an on-state resistance of 0.155Ω.
This document is a datasheet for the FDA28N50, an N-Channel enhancement mode power field effect transistor produced using Fairchild's proprietary planar stripe, DMOS technology. The device is designed to minimize on-state resistance and provide superior switching performance, making it suitable for high-efficiency switched mode power supplies and active power factor correction applications.
| Drain to Source Voltage | 500 V |
|---|---|
| Package Type | TO-3PN |
| Operating Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Case | 0.4 °C/W |
| Total Gate Charge | 80 nC (Typ.) |
The device has a maximum drain-to-source voltage rating of 500 V.
The operating and storage temperature range is from -55 to +150 °C.