This document introduces Fairchild's UniFET TM FDA28N50F N-Channel MOSFET, which has a voltage of 500V, a current of 28A, and a resistance of 0.175Ω. Its features include low gate charge, low output capacitance, fast switching, 100% avalanche tested, improved dv/dt capability, and RoHS compliance.
This document is a technical datasheet for the Fairchild Semiconductor FDA28N50F, an N-channel MOSFET designed using proprietary planar stripe DMOS technology. The device features low on-state resistance and fast switching capabilities, making it suitable for high-efficiency switched mode power supplies and active power factor correction applications.
The datasheet provides comprehensive electrical characteristics, including maximum ratings such as a drain-to-source voltage of 500V and continuous drain current up to 28A. It details thermal properties, capacitance values, switching times, and typical performance curves for on-resistance, breakdown voltage, and gate charge across various operating conditions.
| Drain to Source Voltage | 500 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 28 A |
| Operating Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction to Case) | 0.4 °C/W |
The device operates and stores within a temperature range of -55 to +150 °C.