Key facts
- Brand
- Fairchild
- Model
- 2N6427
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-12
Start here
User ManualFAIRCHILD 2N6427/MMBT6427 NPN Darlington Transistor Manual
Fairchild 2N6427 specifications
| Collector‑Emitter Voltage (VCEO) | 40 V |
|---|---|
| Collector‑Base Voltage (VCBO) | 40 V |
| Emitter‑Base Voltage (VEB0) | 12 V |
| Continuous Collector Current (IC) | 1.2 A |
| Junction Temperature Range | -55 to +150 °C |
| Total Device Dissipation (Pp) | 625 mW |
| Thermal Resistance Junction‑to‑Case (RθJC) | 83.3 °C/W |
| Thermal Resistance Junction‑to‑Ambient (RθJA) | 200 °C/W |
All Fairchild 2N6427 documents by type
Datasheet 1
Ratings, dimensions and ordering codes, for selection and design work.
User Manual 1
Day-to-day operation, settings and troubleshooting. Start here if the product is already set up.
Questions answered in these manuals
What is the maximum continuous collector current for the 2N6427?
The device can handle a continuous collector current of 1.2 A.
What are the breakdown voltage ratings of the 2N6427?
Collector‑Emitter and Collector‑Base breakdown voltages are 40 V, and the Emitter‑Base breakdown voltage is 12 V.