2N6427 is a NPN Darlington transistor designed for applications requiring extremely high current gain at collector currents to 1.0A.
The 2N6427 is a high‑gain NPN Darlington transistor designed for applications requiring up to 1.0 A collector current. It offers a collector‑emitter voltage rating of 40 V and an emitter‑base rating of 12 V, making it suitable for a variety of power switching tasks.
The device is supplied in SOT‑23 and TO‑92 packages, with detailed tape‑and‑reel and bulk packaging specifications. Mechanical dimensions, thermal resistance values, and recommended handling procedures are provided for reliable integration into PCB designs.
| Collector‑Emitter Voltage (VCEO) | 40 V |
|---|---|
| Collector‑Base Voltage (VCBO) | 40 V |
| Emitter‑Base Voltage (VEB0) | 12 V |
| Continuous Collector Current (IC) | 1.2 A |
| Junction Temperature Range | -55 to +150 °C |
| Total Device Dissipation (Pp) | 625 mW |
| Thermal Resistance Junction‑to‑Case (RθJC) | 83.3 °C/W |
| Thermal Resistance Junction‑to‑Ambient (RθJA) | 200 °C/W |
The device can handle a continuous collector current of 1.2 A.
Collector‑Emitter and Collector‑Base breakdown voltages are 40 V, and the Emitter‑Base breakdown voltage is 12 V.