The TLP535 is a GaAs infrared emitting diode (IRED) optically coupled to a photo‑transistor, packaged in a six‑lead plastic DIP. It is designed for digital isolation in applications such as A/D conversion, computer‑peripheral interfaces, and multiplexed data transmission.
Key specifications include a collector‑emitter voltage rating of 55 V, isolation voltage of 2500 V rms, and a current transfer ratio of at least 60 %. The device features a typical propagation delay of 60 ns (tpLH) and requires a 0.1 µF bypass capacitor between pins 8 and 5 for stable operation.
| Collector‑Emitter Voltage | <55 V (Min.) |
|---|---|
| Current Transfer Ratio (CTR) | ≥ 60 % |
| Weight | 0.04 g |
| Forward Current (If) | 20 mA |
A 0.1 µF capacitor must be connected between pins 8 and 5.
The CTR is specified as at least 60 % minimum.