The Toshiba TLP535 is a gallium‑arsenide infrared emitting diode (IRED) optically coupled to a photo‑transistor in a six‑lead DIP package. It provides isolation up to 2500 V rms and a current transfer ratio of at least 60 %.
The document lists detailed electrical parameters, recommended operating conditions, maximum ratings, pin configuration, and switching characteristics such as propagation delay times of about 60 ns. Test circuits and layout notes are also included.
| Collector‑Emitter Voltage | < 55 V (min) |
|---|---|
| Current Transfer Ratio | ≥ 60 % |
| Isolation Voltage | ≥ 2500 V rms |
| Forward Current (If) | 20 mA |
| Pulse Forward Current (IFP) | 40 mA |
| Peak Transient Forward Current (IppT) | 0.5 A |
| Reverse Voltage (VR) | 5 V |
| Operating Temperature Range | 0 °C to 70 °C |
The device is rated for a minimum isolation voltage of 2500 V rms.
The current transfer ratio is at least 60 %.
It can withstand up to 55 V (minimum rating).
The recommended operating temperature is from 0 °C to 70 °C.