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- STMicroelectronics
- Model
- STF3NK80Z
- Industry
- Industrial
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- 3
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- EN
- Last added
- 2012-08-07
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STMicroelectronics STP3NK80Z/STF3NK80Z/STD3NK80Z/STD3NK80Z-1 Datasheet
This document describes the STP3NK80Z, STF3NK80Z, STD3NK80Z, and STD3NK80Z-1 N-channel Super MESH Power MOSFETs. These devices feature an 800V drain-source voltage rating, a typical on-resistance of 3.8 mΩ, and are designed for high current, high-speed switching applications such as off-line power supplies, adapters, PFC, and lighting. The series includes built-in gate-source Zener diodes for protection against voltage transients and ESD.
Read onlineSTMicroelectronics STF3NK80Z specifications
| Drain‑source voltage (VDS) | 800 V |
|---|---|
| Pulsed drain current (ID,pulse) | 10 A |
| Gate‑source voltage (VGS) | +30 V |
| Avalanche energy (Eav) | 170 mJ |
Source: STMicroelectronics STP3NK80Z / STF3NK80Z / STD3NK80Z / STD3NK80Z-1 Datasheet
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Ratings, dimensions and ordering codes, for selection and design work.
Day-to-day operation, settings and troubleshooting. Start here if the product is already set up.
Questions answered in these manuals
What are the applications for these MOSFETs?
They are ideal for high current, high speed switching, off-line power supplies, adapters, PFC, and lighting.
From: STMicroelectronics STP3NK80Z/STF3NK80Z/STD3NK80Z/STD3NK80Z-1 Datasheet
Do these devices have built-in protection?
Yes, they feature built-in back-to-back Zener diodes to enhance ESD capability and absorb voltage transients.
From: STMicroelectronics STP3NK80Z/STF3NK80Z/STD3NK80Z/STD3NK80Z-1 Datasheet
What is the maximum drain‑source voltage for the STP3NK80Z MOSFET?
The device is rated for a maximum drain‑source voltage of 800 V.
From: STMicroelectronics STP3NK80Z / STF3NK80Z / STD3NK80Z / STD3NK80Z-1 Datasheet
What is the avalanche energy rating?
The MOSFET can absorb a single pulse avalanche energy of 170 mJ.
From: STMicroelectronics STP3NK80Z / STF3NK80Z / STD3NK80Z / STD3NK80Z-1 Datasheet