STMicroelectronics STD3NK80Z Manuals

ManualLib has 3 documents for the STMicroelectronics STD3NK80Z: 2 datasheets, 1 user manual. Every file can be read online or downloaded as a PDF for free.

Datasheet 2User Manual 1

Key facts

Model
STD3NK80Z
Industry
Industrial
Documents
3
Languages
EN
Last added
2012-08-07

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DatasheetST STP3NK80Z/STF3NK80Z/STD3NK80Z/STD3NK80Z-1 handbook

ST STP3NK80Z/STF3NK80Z/STD3NK80Z/STD3NK80Z-1 handbook

Datasheet

This document describes the features and characteristics of STP3NK80Z - STF3NK80Z STD3NK80Z - STD3NK80Z-1 N-CHANNEL 800V - 3.8Ω - 2.5A TO-220/FP/DPAK/IPAK Zener-Protected SuperMESH™ Power MOSFET. The product has extremely high dv/dt capability, 100% avalanche tested, minimized gate charge, very low intrinsic capacitances, and very good manufacturing repeatability.

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STMicroelectronics STD3NK80Z specifications

Drain‑source voltage (VDS)800 V
Pulsed drain current (ID,pulse)10 A
Gate‑source voltage (VGS)+30 V
Avalanche energy (Eav)170 mJ

Source: STMicroelectronics STP3NK80Z / STF3NK80Z / STD3NK80Z / STD3NK80Z-1 Datasheet

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Datasheet 2

Ratings, dimensions and ordering codes, for selection and design work.

User Manual 1

Day-to-day operation, settings and troubleshooting. Start here if the product is already set up.

Questions answered in these manuals

What is the maximum drain‑source voltage for the STP3NK80Z MOSFET?

The device is rated for a maximum drain‑source voltage of 800 V.

From: STMicroelectronics STP3NK80Z / STF3NK80Z / STD3NK80Z / STD3NK80Z-1 Datasheet

What is the avalanche energy rating?

The MOSFET can absorb a single pulse avalanche energy of 170 mJ.

From: STMicroelectronics STP3NK80Z / STF3NK80Z / STD3NK80Z / STD3NK80Z-1 Datasheet