Key facts
- Brand
- STMicroelectronics
- Model
- STF2NK60Z
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-08-07
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ST STF2NK60Z/STQ2NK60ZR-AP/STP2NK60Z/STD2NK60Z-1 handbook
STF2NK60Z - STQ2NK60ZR-AP STP2NK60Z - STD2NK60Z-1 N-CHANNEL 600V - 7.2Ω - 1.4A TO-220/TO-220FP/TO-92/IPAK Zener-Protected SuperMESH™ MOSFET is a high-performance MOSFET device produced by ST company. Its characteristics are RON typical value is 7.2Ω, extremely high dv/dt capability, ESD improved capability, 100% avalanche test, new generation high voltage benchmark, and minimized gate charge. It is suitable for low-power battery chargers, switch-mode low-power power supplies (SMPS), low-power, ballasts, CFL (compact fluorescent lamps) and other applications.
Read onlineSTMicroelectronics STF2NK60Z specifications
| Drain‑Source Voltage (VDS) | 600 V |
|---|---|
| Total Power Dissipation (PD) at 25 °C | 45 W |
| Avalanche Current (IAval) | 14 A |
Source: STMicroelectronics STF2NK60Z / STQ2NK60ZR-AP / STP2NK60Z / STD2NK60Z-1 Datasheet
All STMicroelectronics STF2NK60Z documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage for these MOSFETs?
The devices are rated for a maximum drain‑source voltage of 600 V.
From: STMicroelectronics STF2NK60Z / STQ2NK60ZR-AP / STP2NK60Z / STD2NK60Z-1 Datasheet
What protection is built into the MOSFETs?
Each MOSFET includes back‑to‑back Zener diodes between gate and source to improve ESD capability and protect against voltage transients.
From: STMicroelectronics STF2NK60Z / STQ2NK60ZR-AP / STP2NK60Z / STD2NK60Z-1 Datasheet