TT8M11 is a low voltage drive Nch+Pch MOSFET with low on-resistance, low voltage drive and small package, suitable for switch power supply applications
The ROHM TT8M11 is a dual MOSFET (N‑channel and P‑channel) offered in a compact TSST8 surface‑mount package. It features low on‑resistance, low‑voltage 4 V drive, and includes an integrated body‑diode for protection.
The document provides absolute maximum ratings, detailed electrical characteristics, typical characteristic curves, and recommended measurement circuits. It also contains packaging information, ordering details, and legal notices for use in a variety of electronic equipment.
| Drain‑source voltage (VDS) max | 30 V |
|---|---|
| Gate‑source voltage (VGS) max | ±20 V |
| Continuous drain current (Id) N‑channel | 3 A |
| Continuous drain current (Id) P‑channel | 2.5 A |
| Power dissipation (total) | 1.25 W |
| Channel temperature limit (Tch) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
The TT8M11 can withstand up to 30 V between drain and source.
The device is rated for a gate‑source voltage of ±20 V.
The total power dissipation is specified as 1.25 W.
The part can be stored from –55 °C up to +150 °C.