TT8M1 is a low voltage drive Nch + Pch MOSFET produced by ROHM Co., Ltd. It has low on-resistance, high power package, and low voltage drive.
The TT8M1 is a dual N‑channel and P‑channel MOSFET designed for low‑voltage (1.5 V) drive applications. It features low on‑resistance, a high‑power TSST8 package, and built‑in body diodes for both channels.
The document lists absolute maximum ratings, detailed electrical characteristics such as drain‑source voltage, gate‑source voltage, continuous drain current, capacitances, and switching times. It also includes typical application circuits, measurement setups, and legal notices.
| Drain‑source voltage (VDS) | 20 V |
|---|---|
| Gate‑source voltage (VGS) | ±10 V |
| Continuous drain current (ID) | 2.5 A |
| Power dissipation (PD) | 1.25 W total |
| Maximum channel temperature (TCH) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Input capacitance (CISS) | 260 pF |
| Output capacitance (COSS) | 65 pF |
| Total gate charge (Qg) | 3.6 nC |
| Turn‑on delay time (t_on) | 9 ns |
The TT8M1 can withstand up to 20 V drain‑source voltage.
The device is designed for a low‑voltage drive of 1.5 V.
It is supplied in a high‑power TSST8 package.
The gate‑source voltage rating is ±10 V.