This datasheet provides information on the maximum ratings, characteristic values, features and applications of HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr.
The IXYS IXFH 21N50F and IXFT 21N50F are high‑frequency, N‑channel enhancement mode power MOSFETs designed for MHz switching applications. They feature a double‑metal process for low gate resistance, an unclamped inductive switching rating, and a fast intrinsic rectifier.
These devices are suited for DC‑DC converters, switched‑mode and resonant‑mode power supplies, DC choppers, 13.5 MHz industrial applications, pulse generation, laser drivers, and RF amplifiers, offering up to 500 V drain‑source voltage and 300 W power dissipation in compact TO‑247/TO‑268 packages.
| Drain‑Source Voltage (V_DSS) | 500 V |
|---|---|
| Continuous Drain Current (I_D) | 24 A |
| Pulsed Drain Current | 84 A |
| Power Dissipation (P_D) | 300 W |
| Mounting Torque (TO‑247) | 1.13 Nm |
| Weight (TO‑247) | 6 g |
| Switching Speed (t_rise) | < 250 ns |
The MOSFETs are rated for a maximum drain‑source voltage of 500 V.
They are used in DC‑DC converters, switched‑mode and resonant‑mode power supplies, DC choppers, 13.5 MHz industrial applications, pulse generation, laser drivers, and RF amplifiers.
The maximum pulsed drain current is 84 A.