This datasheet lists the maximum ratings, characteristic values, etc. of the IXFH type MOSFET device.
This document is a datasheet for the IXYS IXFH 21N50Q and IXFT 21N50Q, which are N-Channel Enhancement Mode Power MOSFETs in the HiPerFET™ Q-Class family. These devices are designed with an advanced low Qg process to offer low gate charge and capacitances, facilitating easier driving and faster switching speeds.
| Drain-Source Voltage | 500 V |
|---|---|
| Continuous Drain Current | 21 A |
| Pulse Drain Current | 84 A |
| Power Dissipation | 280 W |
| Operating Junction Temperature | -55 to +150 °C |
| On-Resistance (Typical) | 0.25 Ω |
| Package Types | TO-247, TO-268 |
The operating junction temperature range is from -55°C to +150°C.
The typical on-resistance (Rds(on)) is 0.25 Ω when Vgs is 10V and Id is 0.5 times the continuous current.