21N50, 24N50, 26N50 are IXYS's N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family series products, with low RDS(on) HDMOSTM process, rugged polysilicon gate cell structure, unclamped inductive switching (UIS) rated, low package inductance-easy to drive and protect, fast intrinsic rectifier etc.
This document provides detailed specifications for the IXYS HDMOSTM Family of Power MOSFETs. It covers three current variants (21A, 24A, and 26A) available in TO-204 AE, TO-247 AD, and TO-268 package styles.
| Drain-Source Voltage (VDS) | 500 V |
|---|---|
| Continuous Drain Current (ID) @ 25°C | 21 A / 24 A / 26 A |
| Peak Pulsed Drain Current (IDM) @ 25°C | 84 A / 96 A / 104 A |
| On-Resistance (RDS(on)) @ VGS=10V | 0.25 Ω / 0.23 Ω / 0.20 Ω |
| Operating Junction Temperature (TJ) | -55 ... +150 °C |
The maximum continuous drain current is 21 A.
The maximum drain-to-source voltage is 500 V.
The recommended mounting torque is 1.13 Nm or 10 lb.in.