This document is the datasheet of IXFH 26N60Q, introducing the features and characteristics of this product, including maximum ratings, characteristic values, package form, etc.
This document provides technical specifications for the IXYS IXFH 26N60Q and IXFT 26N60Q, which are N-Channel Enhancement Mode Power MOSFETs in the HiPerFET Q-Class family. Key features include avalanche energy and current ratings, fast intrinsic rectifier capabilities, and rugged polysilicon gate cell structures.
| Drain-Source Voltage (Vdss) | 600 V |
|---|---|
| Continuous Drain Current (Id) | 26 A |
| Pulsed Drain Current (Icm) | 104 A |
| Total Gate Charge (Qg) | 80 nC |
| Input Capacitance (Ciss) | 560 pF |
The IXFH 26N60Q is available in the TO-247 package.
The IXFT 26N60Q is available in the TO-268 package.
Yes, the devices are avalanche energy and current rated.