This document is the datasheet of IXFK 26N60Q IX N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Power MOSFETs. Its main features include low gate charge, international standard packages, epoxy meet UL 94 V-0, flammability classification, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure, avalanche energy and current rated, fast intrinsic Rectifier etc.
This document provides advance technical information for the IXYS IXFK 26N60Q and IXFX 26N60Q N-Channel Enhancement Mode Power MOSFETs. These devices utilize the HiPerFET™ process and are designed with a rugged polysilicon gate cell structure.
| Drain-Source Voltage | 600 V |
|---|---|
| Continuous Drain Current | 26 A |
| Pulse Drain Current | 104 A |
| Package Type | TO-264 |
| Operating Temperature Range | -55 ... +150 °C |
The maximum power dissipation is rated at 360 W when the temperature is 25°C.