QFET QFET QFET QFET is a product of DINGHAO.
The FQPF9N50 is a 500 V N‑Channel enhancement mode power MOSFET built with Fairchild's planar stripe DMOS technology. It is designed for high‑efficiency switch‑mode power supplies, power‑factor correction, and electronic lamp ballast applications.
Key specifications include a continuous drain current of 5.3 A at 25 °C, a pulsed drain current rating of 21 A, a typical on‑resistance of 0.732 Ω at VGS = 10 V, and a power dissipation of 50 W. The device is supplied in a TO‑220F package with thermal resistance values of 2.5 °C·W (junction‑to‑case) and 62.5 °C·W (junction‑to‑ambient).
| Drain-Source Voltage (V_DSS) | 500 V |
|---|---|
| Continuous Drain Current (I_D) at 25 °C | 5.3 A |
| Pulsed Drain Current (I_D) (Note 1) | 21 A |
| Gate-Source Voltage (V_GS) | ±30 V |
| Power Dissipation (P_D) at 25 °C | 50 W |
| On‑Resistance (R_DS(on)) typical | 0.732 Ω @ VGS = 10 V |
| Output Capacitance (C_oss) typical | 160 pF |
| Thermal Resistance Junction‑to‑Case (RθJC) | 2.5 °C·W |
| Thermal Resistance Junction‑to‑Ambient (RθJA) | 62.5 °C·W |
| Operating Temperature Range | -55 °C to +150 °C |
The maximum drain‑source voltage (V_DSS) is 500 V.
It can handle a continuous drain current of 5.3 A at 25 °C.
Typical on‑resistance is 0.732 Ω when VGS = 10 V.
The device is supplied in a TO‑220F package.