This article introduces the product characteristics and model information of Dinghao Electronics QFET series
The FQPF9N50 is a 500 V N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It offers low gate charge, low output capacitance, fast switching and 100 % avalanche tested capability, making it suitable for high‑efficiency switch‑mode power supplies and other demanding applications.
The document provides absolute maximum ratings, electrical characteristics, typical performance curves, package dimensions (TO‑220F) and test circuit examples. It also includes trademark, disclaimer and product status information from Fairchild Semiconductor.
| Drain‑Source Voltage (VDS) | 500 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 5.3 A |
| Pulsed Drain Current (ID) (Note 1) | 21 A |
| Gate‑Source Voltage (VGS) | +30 V |
| Power Dissipation (PD) @ 25 °C | 50 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 2.5 °C/W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C/W |
| Typical Gate Charge (Qg) | 28 nC |
| Typical Output Capacitance (Coss) | 210 pF |
The device is rated for a maximum drain‑source voltage of 500 V.
It can conduct up to 5.3 A continuous drain current at 25 °C.
The typical gate charge is 28 nC.
The MOSFET is supplied in a TO‑220F package.