Key facts
- Brand
- Toshiba
- Model
- TLP629-4
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-01
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TOSHIBA Photocoupler GaAs Ired Photo Transistor TLP629 TLP629-2 TLP629-4 Manual(1)
The TLP629 family consists of GaAs infrared emitting diode optocouplers with one (TLP629), two (TLP629‑2) or four (TLP629‑4) isolated channels. They are intended for office machines, telephone equipment and general electronics applications where isolation up to 5 kV rms is required.
The document lists absolute maximum ratings, recommended operating conditions, detailed electrical characteristics, switching performance and usage restrictions. It also includes pin‑out diagrams for the various DIP packages and safety notes for handling the GaAs components.
Toshiba TLP629-4 specifications
| Maximum forward current (IF) | 150 mA |
|---|---|
| Collector‑emitter voltage (VCEO) | 55 V (min.) |
| Isolation voltage | 5000 V rms (min.) |
| Supply voltage (VCC) | 5 V – 24 V |
| Operating temperature range | -25 °C – 85 °C |
Source: TOSHIBA Photocoupler GaAs Ired Photo Transistor TLP629 TLP629-2 TLP629-4 Manual(1)
All Toshiba TLP629-4 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum forward current rating?
The device can handle a forward current up to 150 mA.
From: TOSHIBA Photocoupler GaAs Ired Photo Transistor TLP629 TLP629-2 TLP629-4 Manual(1)
What isolation voltage does the TLP629 provide?
It is rated for at least 5000 V rms isolation.
From: TOSHIBA Photocoupler GaAs Ired Photo Transistor TLP629 TLP629-2 TLP629-4 Manual(1)
What is the maximum forward current for the TLP629?
The maximum forward current is 150 mA.
From: TOSHIBA Photocoupler GaAs Ired Photo Transistor TLP629 TLP629-2 TLP629-4 Manual(1)(1)
What isolation voltage does the TLP629 provide?
The device provides a minimum isolation voltage of 5000 Vrms.
From: TOSHIBA Photocoupler GaAs Ired Photo Transistor TLP629 TLP629-2 TLP629-4 Manual(1)(1)