This document describes the features and characteristics of a series of N-channel 600V MOSFET products, including extremely high dv/dt capability, improved ESD capability, 100% avalanche tested, etc. These products are suitable for low power battery chargers, switch mode low power supplies (SMPS), and low power CFL (compact fluorescent lamps) applications.
The SuperMESH™ series from STMicroelectronics provides high‑voltage N‑channel MOSFETs with optimized strip‑based PowerMESH™ layout, offering low on‑resistance, high dv/dt capability and built‑in Zener protection. These devices are intended for low‑power battery chargers, SMPS, ballast and compact fluorescent lamp applications.
Key specifications include a 600 V drain‑source rating, continuous drain current up to 1.4 A, total power dissipation up to 45 W (TO‑220), typical on‑resistance of 7.2 mΩ and integrated gate‑source Zener diodes for enhanced ESD protection. The datasheet provides detailed absolute maximum ratings, thermal data, avalanche characteristics and switching performance graphs.
| Drain‑Source Voltage (VDS) | 600 V |
|---|---|
| Total Power Dissipation (PD) at 25 °C | 45 W |
| Avalanche Current (IAval) | 14 A |
The devices are rated for a maximum drain‑source voltage of 600 V.
Each MOSFET includes back‑to‑back Zener diodes between gate and source to improve ESD capability and protect against voltage transients.