2M x 8-bit NAND Flash Memory for solid state mass storage market. The flash has 264-byte page program and 4K-byte block erase function.
The K9F1608WO0A is a 2 M‑bit (2,097,152 × 8‑bit) NAND flash memory with an additional 64 K‑bit spare area, offered in a 44‑lead TSOP Type II package. It provides automatic program and erase functions, high endurance, and data retention suitable for solid‑state storage applications.
The datasheet details electrical specifications such as a 2.7 V to 5.5 V supply range, typical program time of 250 µs, block erase time of 2 ms, and endurance of 1 million program/erase cycles. Pin configurations, timing diagrams, absolute maximum ratings, and recommended operating conditions are also included.
| Supply Voltage | 2.7 V – 5.5 V |
|---|---|
| Memory Cell Array | (2M + 64K) bits × 8 bits |
| Page Program Size | 256 + 8 bytes |
| Block Erase Size | 4 K + 128 bytes |
| Serial Page Access Time | 80 ns (minimum) |
| Typical Program Time | 250 µs |
| Typical Block Erase Time | 2 ms |
| Endurance | 1 million program/erase cycles |
| Data Retention | 10 years |
| Package Type | 44‑lead TSOP Type II (400 mil / 0.8 mm pitch) |
The device operates from 2.7 V to 5.5 V.
It is rated for 1 million program/erase cycles.
Typical page program time is 250 µs.
It uses a 44‑lead TSOP Type II package (400 mil / 0.8 mm pitch).