samsung K9F1608W0A-TCB0 K9F1608W0A-TIB0 FLASH MEMORY handbook(1)

K9F1608W0A-TCB0, K9F1608W0A-TIB0 FLASH MEMORY is a 2Mx8Bit NAND Flash Memory produced by Samsung Electronics of Korea.


samsung K9F1608W0A-TCB0 K9F1608W0A-TIB0 FLASH MEMORY handbook(1) - cover page
Brand
Samsung
Category
Memory
Document type
Datasheet
Language
English
Pages
25
File format
PDF
File size
325 KB
Published
01 April, 2012
Updated
30 September, 2023
MD5 checksum
463D75FA1501B4CC40A9CA7FF884EEC5

About this manual

The Samsung K9F1608WO0A is a 2‑Mbit (2,097,152 × 8‑bit) NAND flash memory chip designed for solid‑state mass‑storage applications such as digital voice recorders, cameras and other portable devices.

It features a 2.7 V‑5.5 V supply range, automatic program/erase, 250 µs typical page program time, 2 ms block erase, 1 M program/erase cycles endurance and 10‑year data retention, packaged in a 44‑lead TSOP Type II.

What's inside

  • Features
  • Pin Configuration
  • General Description
  • Pin Description
  • Absolute Maximum Ratings
  • Recommended Operating Conditions
  • DC and Operating Characteristics
  • Valid Block
  • AC Timing Characteristics
  • Package Dimensions

Specifications

Supply Voltage2.7 V ~ 5.5 V
Memory Organization2M × 8 bit NAND Flash
Page Program Time (typ.)250 µs
Block Erase Time (typ.)2 ms
Endurance1 M program/erase cycles
Data Retention10 years
Package Type44‑lead TSOP Type II (400 mil / 0.8 mm pitch)
Valid Block Number502 ~ 512 blocks

Frequently asked questions

What is the supply voltage range for the K9F1608WO0A?

The device operates from 2.7 V to 5.5 V.

How many program/erase cycles can the chip endure?

It is rated for 1 million program/erase cycles.

What is the typical time to program a page?

A page program typically takes about 250 µs.

What is the data retention period of the device?

The memory retains data for up to 10 years.

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