The TT8J2 is a low on-resistance, high power package P-channel MOSFET. It can be used for switching applications.
This data sheet describes the ROHM TT8J2 P‑channel MOSFET, a low‑on‑resistance, high‑power device designed for 4 V drive applications. It includes structure, dimensions, features, and typical application circuits.
Key sections cover absolute maximum ratings, thermal resistance, detailed electrical characteristics, characteristic curves, and measurement circuit diagrams. The document ends with legal notices and contact information for ROHM support. This manual is written in Chinese.
| Drain‑source voltage (VDS) | -10 V |
|---|---|
| Gate‑source voltage (VGS) rating | -30 V |
| Thermal resistance, junction‑to‑ambient | 100 °C/W |
The device is rated for a drain‑source voltage of –10 V.