ROHM TT8J21 1.5V Drive Pch+Pch MOSFET Datasheet

This document describes the features and characteristics of the 1.5V Drive Pch+Pch MOSFET TT8J21 produced by ROHM, including low on-resistance, high power package, and low voltage drive. The product is suitable for switching applications.


ROHM TT8J21 1.5V Drive Pch+Pch MOSFET Datasheet - cover page
Brand
ROHM
Category
MOS transistor
Document type
Datasheet
Language
Chinese
Pages
6
File format
PDF
File size
196 KB
Published
01 June, 2012
Updated
29 September, 2023
Model
TT8J2
MD5 checksum
6B6B0829A49BAA0C7E45E639F8D6842D

About this manual

The ROHM TT8J21 is a 1.5 V drive P‑channel MOSFET presented in a high‑power package. The datasheet provides structural details, dimensions, key features such as low on‑resistance and low‑voltage drive, and typical application circuits.

Electrical specifications cover absolute maximum ratings, static and pulsed characteristics, capacitance values, and switching performance. Packaging information and measurement circuit diagrams are also included, along with safety notices and contact details for ROHM support. This manual is written in Chinese.

What's inside

  • Structure
  • Dimensions
  • Features
  • Applications
  • Packaging specifications
  • Absolute maximum ratings
  • Electrical characteristics
  • Electrical characteristic curves
  • Measurement circuits
  • Notice

Specifications

Drain‑source voltage (VDS)-10 V
Gate‑source voltage (VGS)-4.5 V

Frequently asked questions

What is the maximum drain‑source breakdown voltage of the TT8J21?

The maximum drain‑source voltage is -10 V.

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