The document describes the HiPerFETTM power MOSFETs of IXYS company, including the PLUS 247TM (IXFX) and TO-264 AA (IXFK) models. These products feature low Qg, high dV/dt, and low trr.
This document is a datasheet for the IXYS IXFK 27N80Q, IXFR 27N80Q, and IXFX 27N80Q HiPerFET Power MOSFETs. These N-Channel Enhancement Mode devices are avalanche rated with low gate charge and capacitances, designed for applications such as DC-DC converters, battery chargers, and switched-mode power supplies.
| Drain-Source Voltage | 800 V |
|---|---|
| Continuous Drain Current | 27 A |
| Package Type | TO-264 |
| Operating Temperature Range | -55...+150 °C |
| Gate-Source Threshold Voltage | 2.0 V (typ) |
The device features low gate charge and capacitances for easier driving and faster switching, along with an avalanche rating for unclamped inductive load switching.
It is suitable for DC-DC converters, battery chargers, switched-mode and resonant-mode power supplies, DC choppers, and AC motor control.