This document describes the features and characteristics of IXYS products, including low Qg, high dv/dt, international standard packages, low RDS (on), and unclamped inductive switching (UIS), etc.
This document provides technical specifications for the IXFH 9N80Q and IXFT 9N80Q, which are N-Channel Enhancement Mode Power MOSFETs from the Q-Class series. The devices are designed with advanced low Qg processes to facilitate easier driving and faster switching speeds.
| Drain-Source Voltage (Vdss) | 800 V |
|---|---|
| Continuous Drain Current (Id) | 9 A |
| Pulse Drain Current (Idm) | 36 A |
| Package Type | TO-247 / TO-268 |
Yes, the devices are Avalanche Rated Low Qg.
The maximum power dissipation is 180 W at a temperature of 25°C.