IXYS IXFH8N80/IXFH9N80 Power MOSFET Preliminary Data Sheet

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IXYS IXFH8N80/IXFH9N80 Power MOSFET Preliminary Data Sheet - cover page
Brand
IXYS
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
4
File format
PDF
File size
203 KB
Published
15 June, 2012
Updated
30 September, 2023
MD5 checksum
BAF8896201AB73C94F544984525A29F4

About this manual

This document provides preliminary technical specifications for the IXYS HiPerFET IXFH8N80 (8A) and IXFH9N80 (9A) N-channel enhancement mode Power MOSFETs. These devices feature a rugged polysilicon gate cell structure designed for high dv/dt applications with low on-resistance.

What's inside

  • Maximum Ratings
  • Electrical Characteristics
  • Package Outline
  • Source-Drain Diode
  • Output Characteristics
  • Safe Operating Area

Specifications

Drain-Source Voltage (Vdss)800 V
Continuous Drain Current (IXFH8N80)8 A
Continuous Drain Current (IXFH9N80)9 A
Operating Temperature Range-55 to +150 °C

Frequently asked questions

Are these MOSFETs suitable for surface mounting?

Yes, the IXFH9N80 model has a suffix 'S' indicating it is surface mountable.

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