26N50P is a N-channel MOSFET produced by IXYS. It has a maximum current of 26A, a minimum on-resistance of 230mΩ, and a maximum voltage of 500V.
This document provides preliminary technical data for the IXFH 26N50P, IXFV 26N50P, and IXFV 26N50PS Power MOSFETs manufactured by IXYS. The devices are available in TO-247 and PLUS220/PLUS220SMD packages and feature fast intrinsic diodes, low package inductance, and avalanche ratings suitable for unclamped inductive switching applications.
| Drain-Source Voltage (VDS) | 500 V |
|---|---|
| Drain-Source On-Resistance (RDS(on)) | 230 mΩ |
| Gate Charge (Qg) | 40 nC |
| Operating Junction Temperature (Tj) | -55 to +150 °C |
The maximum drain-source voltage is 500 V.
Yes, the devices are avalanche rated.