IXFH20N80Q and IXFK20N80Q are IXYS's N-channel enhancement mode avalanche rated, low Qg, high dv/dt power MOSFETs. The main features are low RDS (on) low Qg, avalanche energy and current rated, fast intrinsic rectifier, easy to mount, space saving, high power density.
This document provides technical specifications for the IXYS HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode series, specifically the IXFH20N80Q, IXFK20N80Q, and IXFT20N80Q models. It details maximum ratings, characteristic values, and advanced technical information including electrical parameters such as drain-source voltage, on-resistance, and switching times.
| Drain-Source Voltage (VDS) | 800 V |
|---|---|
| Continuous Drain Current (ID) | 20 A |
| On-Resistance (RDS(on)) | 0.42 Ohms |
| Operating Junction Temperature (TJ) | -55 to +150 C |
| Package Types | TO-247, TO-264, TO-268 |
The document covers the IXFH20N80Q, IXFK20N80Q, and IXFT20N80Q models.
The maximum drain-source voltage is 800 V.
The typical on-resistance is 0.42 Ohms.