This document is the data sheet for IXFH20N80Q, which introduces the features of the product, including maximum voltage, maximum current, and on-resistance.
The IXFH20N80Q is an N‑channel enhancement‑mode power MOSFET with an avalanche‑rated 800 V drain‑source voltage and low on‑resistance. It is offered in TO‑247, TO‑264 and TO‑268 packages and is designed for high‑power density applications.
The datasheet provides maximum ratings, electrical characteristics, mechanical dimensions, and package outlines, along with typical performance figures such as continuous drain current, pulsed current capability, and power dissipation limits.
| Drain‑Source Voltage (VDS) | 800 V |
|---|---|
| Continuous Drain Current (ID) | 20 A |
| Pulsed Drain Current (ID,pulse) | 80 A |
| Avalanche Energy (EAS) | 1.5 J |
| Power Dissipation (PD) at 25 °C | 360 W |
| Junction Temperature Range | -55 °C to +150 °C |
The device is rated for a maximum drain‑source voltage of 800 V.
It can carry a continuous drain current of 20 A at 25 °C.
The MOSFET can dissipate up to 360 W when the case temperature is 25 °C.