The document describes the features and characteristics of a product, including its performance, functions, etc.
This document provides preliminary technical specifications for the IXYS HiPerFET™ family of N-Channel Enhancement Mode Power MOSFETs, specifically models IXFH16N90 and IXFX16N90. These devices utilize a rugged polysilicon gate cell structure and are designed for high dv/dt applications with low on-resistance.
| Drain-Source Voltage (Vdss) | 900 V |
|---|---|
| Continuous Drain Current (Ic) | 16 A |
| Package Type | TO-247 AD / PLUS 247™ |
| Operating Temperature Range | -55 ... +150 °C |