This document mainly introduces the features and characteristics of IXYS's Q-Class N-channel enhancement mode avalanche rated low Qg, high dv/dt power MOSFET products, including maximum ratings, characteristic values, packaging, installation dimensions, and typical application circuits.
This document provides technical specifications for the IXYS HiPerFETTM Q-Class N-Channel Enhancement Mode Power MOSFETs. It covers three specific model numbers: IXFH 16N90Q, IXFK 16N90Q, and IXFT 16N90Q.
| Drain-Source Voltage (VDS) | 900 V |
|---|---|
| Continuous Drain Current (ID25) | 16 A |
| On-Resistance (RDS(on)) | 0.65 Ohms |
| Operating Junction Temperature (TJ) | -55 to +150 °C |
The document covers IXFH 16N90Q, IXFK 16N90Q, and IXFT 16N90Q.
The maximum junction temperature (TJ) is +150 °C.