IXYS IXFH/IXFM6N90 IXFH/IXFM6N100 handbook

Provides technical parameters for HiPerFETTM power MOSFETs, including maximum voltage, maximum current, maximum power, and maximum temperature.

Brand: IXYS
Category: Other Electronics
Document type: Datasheet
Language: English
Pages: 4
File format: PDF
File size: 76 KB
Published: 15 June, 2012
Updated: 30 September, 2023
Models: 6N90, 6N100
MD5 checksum: 73FA2C410284FC902A126042B3AB6C4A
PDF: IXYS IXFH/IXFM6N90 IXFH/IXFM6N100 handbook PDF

About this manual

This document provides technical specifications for the IXYS HiPerFETTM Power MOSFETs, specifically the N-Channel Enhancement Mode devices with model numbers 6N90 and 6N100. It covers maximum ratings, characteristic values, and application information for these components.

What's inside

Maximum Ratings
Characteristic Values
Features
Applications
Package Outlines
Source-Drain Diode
Thermal Response

Specifications

Drain-Source Voltage (VDS)	900 V (6N90), 1000 V (6N100)
Continuous Drain Current (ID)	6 A
Maximum Junction Temperature (TJ)	150 /G176C
Package Types	TO-247 AD (IXFH), TO-204 AA (IXFM)
RDS(on) at VGS=10V, ID=0.5A	1.8 /G87 (6N90), 2.0 /G87 (6N100)

Frequently asked questions

What are the applications for these MOSFETs?

They are suitable for DC-DC converters, synchronous rectification, battery chargers, and AC motor control.

What is the maximum operating temperature?

The maximum junction temperature is 150 degrees Celsius.

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