The document describes the features and characteristics of IXYS products, including RF capability, low gate resistance, shock resistance, low package inductance, and fast intrinsic rectifier. It is suitable for applications such as DC-DC converters, switched-mode power supplies, pulse generators, laser drivers, and RF amplifiers.
This document is a datasheet for the IXYS IXFH 6N100F and IXFT 6N100F N-Channel Enhancement Mode Power MOSFETs. These devices are designed for F-Class MegaHertz switching applications and feature avalanche rating, low Qg, low intrinsic resistance, and high dV/dt capability. They are available in TO-247 and TO-268 packages.
| Package Types | TO-247, TO-268 |
|---|---|
| Switching Frequency | >500kHz |